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igbt highspeed5igbtintrenchstop tm 5technologycopackedwithfull-ratedrapid1 fastandsoftantiparalleldiode IKW75N65EH5 650vduopackigbtandfull-rateddiode highspeedseriesfifthgeneration datasheet industrialpowercontrol
2 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 highspeed5igbtintrenchstop tm 5technologycopackedwithfull-rated rapid1fastandsoftantiparalleldiode featuresandbenefits: highspeedh5technologyoffering ?best-in-classefficiencyinhardswitchingandresonant topologies ?plugandplayreplacementofpreviousgenerationigbts ?650vbreakdownvoltage ?lowgatechargeq g ?igbtcopackedwithfull-ratedrapid1fastandsoftantiparallel diode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?uninterruptiblepowersupplies ?solarconverters ?weldingconverters ?midtohighrangeswitchingfrequencyconverters packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKW75N65EH5 650v 75a 1.65v 175c k75eeh5 pg-to247-3 g c e 1 2 3
3 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 g c e 1 2 3
4 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 90.0 75.0 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 300.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s 1) - 300.0 a diodeforwardcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i f 90.0 75.0 a diodepulsedcurrent, t p limitedby t vjmax 1) i fpuls 300.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 395.0 198.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.38 k/w diode thermal resistance, junction - case r th(j-c) 0.45 k/w thermal resistance junction - ambient r th(j-a) 40 k/w 1) defined by design. not subject to production test. g c e 1 2 3
5 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =75.0a t vj =25c t vj =125c t vj =175c - - - 1.65 1.85 1.95 2.10 - - v diode forward voltage v f v ge =0v, i f =75.0a t vj =25c t vj =125c t vj =175c - - - 1.35 1.33 1.30 1.70 - - v gate-emitter threshold voltage v ge(th) i c =0.75ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - 1.0 3000.0 75.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =75.0a - 104.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 4200 - output capacitance c oes - 130 - reverse transfer capacitance c res - 17 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =75.0a, v ge =15v - 160.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 28 - ns rise time t r - 33 - ns turn-off delay time t d(off) - 174 - ns fall time t f - 41 - ns turn-on energy e on - 2.30 - mj turn-off energy e off - 0.90 - mj total switching energy e ts - 3.20 - mj t vj =25c, v cc =400v, i c =75.0a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =8.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
6 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 turn-on delay time t d(on) - 25 - ns rise time t r - 14 - ns turn-off delay time t d(off) - 178 - ns fall time t f - 15 - ns turn-on energy e on - 0.90 - mj turn-off energy e off - 0.30 - mj total switching energy e ts - 1.20 - mj t vj =25c, v cc =400v, i c =37.5a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =8.0 w , l s =30nh, c s =20pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 92 - ns diode reverse recovery charge q rr - 1.33 - c diode peak reverse recovery current i rrm - 20.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -600 - a/s t vj =25c, v r =400v, i f =75.0a, di f /dt =1000a/s, l s =30nh, c s =25pf diode reverse recovery time t rr - 59 - ns diode reverse recovery charge q rr - 1.00 - c diode peak reverse recovery current i rrm - 25.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1750 - a/s t vj =25c, v r =400v, i f =37.5a, di f /dt =1000a/s, l s =30nh, c s =25pf switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 27 - ns rise time t r - 34 - ns turn-off delay time t d(off) - 194 - ns fall time t f - 38 - ns turn-on energy e on - 3.00 - mj turn-off energy e off - 1.00 - mj total switching energy e ts - 4.00 - mj t vj =150c, v cc =400v, i c =75.0a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =8.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 25 - ns rise time t r - 16 - ns turn-off delay time t d(off) - 207 - ns fall time t f - 18 - ns turn-on energy e on - 1.80 - mj turn-off energy e off - 0.40 - mj total switching energy e ts - 2.20 - mj t vj =150c, v cc =400v, i c =37.5a, v ge =0.0/15.0v, r g(on) =8.0 w , r g(off) =8.0 w , l s =30nh, c s =20pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
7 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 diodecharacteristic,at t vj =150c diode reverse recovery time t rr - 123 - ns diode reverse recovery charge q rr - 3.70 - c diode peak reverse recovery current i rrm - 43.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -2000 - a/s t vj =150c, v r =400v, i f =75.0a, di f /dt =1000a/s, l s =30nh, c s =25pf diode reverse recovery time t rr - 108 - ns diode reverse recovery charge q rr - 2.70 - c diode peak reverse recovery current i rrm - 38.7 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1050 - a/s t vj =150c, v r =400v, i f =37.5a, di f /dt =1000a/s, l s =30nh, c s =25pf g c e 1 2 3
8 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s, i cmax definedbydesign-notsubjectto production test) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 400 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 30 60 90 120 150 180 210 240 270 300 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 4v g c e 1 2 3
9 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 figure 5. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 30 60 90 120 150 180 210 240 270 300 v ge = 19v 17v 15v 12v 10v 7v 7v 6v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 300 t vj = 25c t vj = 150c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i c = 37.5a i c = 75a i c = 150a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =8 w , r g(off) =8 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 25 50 75 100 125 150 175 200 225 1 10 100 1000 t d(off) t f t d(on) t r g c e 1 2 3
10 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 figure 9. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =75a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 75 85 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =75a, r g(on) =8 w , r g(off) =8 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.75ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =8 w , r g(off) =8 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 25 50 75 100 125 150 175 200 225 0 2 4 6 8 10 12 14 16 18 20 e off e on e ts g c e 1 2 3
11 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 figure 13. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =75a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 85 0 2 4 6 8 10 12 14 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =75a, r g(on) =8 w , r g(off) =8 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =75a, r g(on) =8 w , r g(off) =8 w ,dynamictest circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 e off e on e ts figure 16. typicalgatecharge ( i c =75a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 v ce = 130v v ce = 520v g c e 1 2 3
12 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.010336 2.8e-5 2 0.078242 2.3e-4 3 0.081139 2.3e-3 4 0.196217 0.013145 5 0.015938 0.113481 6 1.8e-3 1.869237 figure 19. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 3.1e-4 5.0e-6 2 0.014345 2.7e-5 3 0.094354 2.2e-4 4 0.098809 2.2e-3 5 0.228276 0.012472 6 0.019674 0.102908 7 2.0e-3 1.856405 figure 20. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 500 700 900 1100 1300 1500 0 20 40 60 80 100 120 140 160 180 200 t vj = 25c, i f = 75a t vj = 150c, i f = 75a g c e 1 2 3
13 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 figure 21. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t vj = 25c, i f = 75a t vj = 150c, i f = 75a figure 22. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 500 700 900 1100 1300 1500 0 10 20 30 40 50 60 70 80 90 t vj = 25c, i f = 75a t vj = 150c, i f = 75a figure 23. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 500 700 900 1100 1300 1500 -6000 -5500 -5000 -4500 -4000 -3500 -3000 -2500 -2000 -1500 -1000 -500 0 t vj = 25c, i f = 75a t vj = 150c, i f = 75a figure 24. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 t vj = 25c t vj = 150c g c e 1 2 3
14 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 figure 25. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i f = 35a i f = 75a i f = 150a g c e 1 2 3
15 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 g c e 1 2 3 package drawing pg-to247-3
16 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 g c e 1 2 3 package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
17 IKW75N65EH5 highspeedseriesfifthgeneration rev.2.1,2015-05-20 revisionhistory IKW75N65EH5 revision:2015-05-20,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 2015-05-20 final data sheet welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e 1 2 3 package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions

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